Infineon IPG20N10S4L35ATMA1: A 100V N-Channel Power MOSFET Engineered for Peak Performance

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems demands semiconductor components that excel under demanding conditions. Addressing this need, the Infineon IPG20N10S4L35ATMA1 stands out as a premier 100V N-Channel Power MOSFET, leveraging advanced technology to set a new benchmark for performance.

This MOSFET is built on Infineon’s proprietary OptiMOS™ 5 power technology platform, a foundation renowned for its exceptional efficiency. The key to its performance lies in its extremely low typical on-state resistance (R DS(on)) of just 3.5 mΩ. This minimal resistance is critical for minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller form factors due to less demanding cooling requirements.

Designed with the rigorous standards of the automotive industry in mind, the IPG20N10S4L35ATMA1 is AEC-Q101 qualified. This makes it an ideal solution for a wide array of automotive applications, including electric power steering (EPS), braking systems, engine management, and DC-DC converters in 48V mild-hybrid vehicles. Its robust construction ensures stable operation in the face of temperature fluctuations, vibration, and other stresses inherent to the automotive environment.

Beyond the automotive sector, this MOSFET’s advantages are equally impactful in industrial settings. It is perfectly suited for high-frequency switching power supplies, motor control drives, solar inverters, and battery management systems. The combination of low gate charge (Q G) and low R DS(on) allows for faster switching speeds, which further improves efficiency and enables designers to push the boundaries of power density in their designs.

The device is offered in a space-saving, thermally efficient D2PAK (TO-263) surface-mount package. This package type is not only suitable for automated assembly processes but also provides excellent power dissipation capabilities, ensuring the MOSFET remains within its optimal operating temperature range even under high load conditions.

ICGOODFIND: The Infineon IPG20N10S4L35ATMA1 is a superior 100V MOSFET that delivers outstanding efficiency and reliability through its ultra-low R DS(on) and robust automotive-grade design. It is a pivotal component for engineers aiming to develop next-generation, high-performance power systems in both automotive and industrial domains.

Keywords: OptiMOS™ 5, AEC-Q101, Low R DS(on), Power Efficiency, Automotive Grade.