**HMC490LP5E: A Comprehensive Technical Overview of the GaAs MMIC pHEMT Low-Noise Amplifier from 17 to 28 GHz**

The **HMC490LP5E** from Analog Devices Inc. represents a state-of-the-art solution for low-noise amplification within the **Ku-band and Ka-band spectrum**, specifically engineered for operation from **17 to 28 GHz**. This GaAs MMIC (Monolithic Microwave Integrated Circuit) pHEMT (pseudomorphic High Electron Mobility Transistor) amplifier is packaged in a leadless 5x5 mm LP5 surface-mount package, making it an ideal component for high-frequency communication, radar, and test equipment applications where performance, size, and reliability are paramount.

**Core Architecture and Technology**

Fabricated on an advanced Gallium Arsenide (GaAs) pHEMT process, the HMC490LP5E leverages the superior electron mobility of this technology. This foundation is critical for achieving exceptionally low noise figure and high gain at microwave frequencies, where traditional silicon-based technologies struggle. The MMIC approach integrates all active and passive components onto a single semiconductor die, ensuring **high repeatability**, improved reliability, and reduced parasitic effects compared to discrete amplifier designs.

**Key Performance Characteristics**

The amplifier delivers outstanding electrical performance across its entire operational bandwidth. Its most notable feature is an ultra-low **noise figure of just 1.8 dB**, which is crucial for enhancing the sensitivity of receiver systems, allowing for the detection of very weak signals. This is complemented by a high **small-signal gain of 17 dB**, which provides significant signal amplification in the first critical stage of a receiver chain.

Furthermore, the device exhibits excellent linearity with an output IP3 (Third-Order Intercept Point) of +25 dBm, enabling it to handle strong interfering signals without generating excessive intermodulation distortion. It requires a single positive supply voltage between +3V to +5V, drawing a typical current of 80 mA, making it suitable for portable and low-power applications. The RF ports are internally matched to 50 Ohms, simplifying board design and integration.

**Application Spectrum**

The combination of wide bandwidth and high performance makes the HMC490LP5E extremely versatile. Its primary applications include:

* **Point-to-Point and Point-to-Multi-Point Radios:** For 5G backhaul and other microwave communication links.

* **SATCOM (Satellite Communication) and VSAT Terminals:** In both military and commercial ground terminal equipment.

* **Military and Aerospace Systems:** Including radar, electronic warfare (EW), and threat detection systems.

* **Test and Measurement Equipment:** Serving as a pre-amplifier in spectrum analyzers and signal generators to improve system dynamic range.

**Packaging and Integration**

The LP5 (5x5 mm) leadless surface-mount package is designed for easy integration into modern microwave printed circuit boards (PCBs). It is compatible with high-volume surface-mount technology (SMT) assembly processes. The package features exposed metal pads on its bottom side for an excellent electrical ground connection and efficient heat dissipation, which is vital for maintaining performance stability.

**ICGOODFIND**

In summary, the **HMC490LP5E** stands out as a premier **GaAs pHEMT MMIC LNA** that successfully balances ultra-low noise, high gain, and wide bandwidth in a compact, industry-standard package. Its robust performance from **17 to 28 GHz** makes it an indispensable component for designers pushing the limits of next-generation high-frequency systems.

**Keywords:**

**GaAs pHEMT**

**Low-Noise Amplifier (LNA)**

**Ku-band and Ka-band**

**Noise Figure**

**MMIC**