Infineon IHW15N120R3: A 1200V 15A IGBT in a TO-247 Package for High-Efficiency Switching Applications
The relentless pursuit of higher efficiency, robustness, and power density in modern power electronics drives the continuous evolution of semiconductor technology. Among the key components enabling this progress is the Insulated Gate Bipolar Transistor (IGBT). The Infineon IHW15N120R3 stands out as a prime example, engineered to deliver superior performance in demanding high-voltage switching applications. This 1200V, 15A IGBT, housed in the ubiquitous TO-247 package, combines low losses with high reliability, making it an excellent choice for designers of industrial systems, renewable energy inverters, and motor drives.
A defining characteristic of the IHW15N120R3 is its advanced trench gate field-stop technology. This proprietary design from Infineon is pivotal to its exceptional performance. The technology significantly reduces the device's saturation voltage (VCE(sat)), which directly translates to lower conduction losses. Simultaneously, it enables a sharp turn-off characteristic, minimizing switching losses. This optimal balance between conduction and switching losses is critical for achieving high overall efficiency, particularly in circuits operating at elevated switching frequencies. The result is cooler operation, reduced stress on the system, and the potential for smaller heatsinks, contributing to higher power density.
The high voltage capability of 1200V provides a substantial safety margin for operations in 600V bus systems, which are common in three-phase industrial equipment and solar inverters. This robust voltage rating ensures resilience against voltage spikes and transients inherent in such environments, enhancing system reliability and longevity. Furthermore, the 15A continuous collector current rating makes it suitable for a broad range of medium-power applications.
Packaged in the industry-standard TO-247 package, the IHW15N120R3 offers excellent thermal performance and mechanical robustness. The package is designed for easy mounting and efficient heat dissipation, which is essential for maintaining performance under continuous high-load conditions. Its isolated version (IHW15N120R3XKSA1) also offers simplified thermal management by allowing direct mounting to a heatsink without an insulating washer, further reducing the overall thermal resistance.
Additional features underscore its design for robustness. It possesses a short-circuit ruggedness rating of 5µs, allowing the system sufficient time to react to fault conditions without catastrophic failure. The positive temperature coefficient of the saturation voltage also simplifies the paralleling of multiple devices for higher current capability, ensuring stable current sharing.
ICGOOODFIND: The Infineon IHW15N120R3 is a highly efficient and robust IGBT that leverages advanced trench gate field-stop technology to achieve an optimal loss trade-off. Its 1200V voltage rating and 15A current capability, encased in a thermally efficient TO-247 package, make it a versatile and reliable solution for high-performance power conversion stages, ultimately leading to systems that are more efficient, compact, and dependable.
Keywords: IGBT, High-Efficiency Switching, Trench Gate Field-Stop, TO-247 Package, 1200V Rating.
