Infineon BSZ028N04LS: 40 V OptiMOS Power MOSFET for High-Efficiency, Low-Loss Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the need for advanced semiconductor components. At the forefront of this innovation is Infineon Technologies with its BSZ028N04LS, a 40 V N-channel OptiMOS power MOSFET engineered to set a new benchmark in performance for a wide array of applications.

Built on Infineon’s advanced OptiMOS technology, this MOSFET is designed to minimize conduction and switching losses, which are critical factors in enhancing overall system efficiency. Its standout feature is an exceptionally low typical on-state resistance (RDS(on)) of just 2.0 mΩ at a gate-source voltage of 10 V. This ultra-low RDS(on) directly translates to reduced power dissipation during operation, allowing for higher current handling and cooler operation, which is paramount in power-sensitive designs.

The device’s optimized gate charge (Qg) further contributes to its high-performance profile. By ensuring swift switching transitions, it significantly cuts down switching losses, making it an ideal choice for high-frequency circuits found in switch-mode power supplies (SMPS), motor control systems, and synchronous rectification in DC-DC converters. The 40 V drain-source voltage rating makes it perfectly suited for use in 24 V bus systems, including industrial automation, robotics, and telecommunications infrastructure.

Housed in a compact and robust SuperSO8 package, the BSZ028N04LS also offers excellent thermal performance and power density, enabling designers to create smaller, more reliable end products without compromising on power or efficiency.

ICGOOODFIND: The Infineon BSZ028N04LS is a superior power MOSFET that delivers a winning combination of ultra-low resistance, fast switching speed, and high reliability, making it an optimal solution for designers aiming to push the boundaries of efficiency and power density in modern electronic systems.

Keywords: OptiMOS Technology, Low RDS(on), High-Efficiency, Power MOSFET, Synchronous Rectification.