Infineon IPP120N20NFD: A High-Performance 200V OptiMOS Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, the Infineon IPP120N20NFD stands out as a premier 200V N-channel power MOSFET engineered to meet these challenges head-on. As part of Infineon's esteemed OptiMOS™ family, this device is tailored for high-performance switching applications, offering an exceptional blend of low losses, robust switching behavior, and high reliability.

A cornerstone of the IPP120N20NFD's performance is its extremely low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance of just 1.8 mΩ at 10 V, it minimizes conduction losses, which is paramount for applications handling high currents. This is complemented by an outstanding gate charge (Q G) of 220 nC typical, which ensures swift switching transitions and drastically reduces switching losses. The synergy of these parameters allows power designers to achieve new levels of operational efficiency, particularly in demanding environments like server and telecom power supplies, industrial motor drives, and high-performance computing.

Beyond raw efficiency numbers, the device is packaged in Infineon's proprietary TO-leadless (TOLL) package. This state-of-the-art packaging technology offers a significantly reduced footprint and profile compared to standard D2PAK packages, enabling more compact and streamlined PCB designs. Crucially, the TOLL package features an exceptionally low parasitic inductance in the source path. This is a critical advantage for switching performance, as it helps to suppress voltage overshoot and ringing, leading to cleaner switching waveforms, reduced electromagnetic interference (EMI), and enhanced overall system stability.

Furthermore, the IPP120N20NFD is designed for robustness. It offers a wide operating temperature range and is qualified for industrial applications, ensuring long-term reliability. Its high avalanche ruggedness and strong body diode make it a dependable choice in circuits where freewheeling and unclamped inductive switching (UIS) events may occur.

ICGOOODFIND: The Infineon IPP120N20NFD is a superior 200V power MOSFET that sets a high benchmark for efficiency and power density. Its industry-leading low R DS(on), optimized gate charge, and advanced TOLL packaging make it an ideal solution for designers aiming to push the boundaries in high-frequency, high-efficiency switch-mode power supplies and motor control applications.

Keywords: Low RDS(on), High Efficiency, TOLL Package, OptiMOS™, Fast Switching