Infineon IPA65R190C7 CoolMOS C7 Power Transistor: Datasheet, Application Circuit, and Design Considerations
The relentless pursuit of higher efficiency, power density, and reliability in power electronics has driven the evolution of MOSFET technology. At the forefront of this innovation is Infineon's CoolMOS™ C7 series, with the IPA65R190C7 standing out as a prime example of a high-performance superjunction (SJ) MOSFET designed for demanding switching applications.
This article delves into the key specifications of the IPA65R190C7, explores a typical application circuit, and outlines critical design considerations for engineers.
Datasheet Deep Dive: Key Specifications
The IPA65R190C7 is a 650V, 12A (TC=100°C) N-channel power MOSFET built on Infineon's revolutionary CoolMOS™ C7 technology. Its standout feature is its exceptionally low figure-of-merit (RDS(on) x Eoss), which directly translates to minimized switching and conduction losses. This is a cornerstone for achieving high efficiency across a wide load range.
Key parameters from the datasheet include:
Ultra-Low On-Resistance (RDS(on)): A maximum of 0.190 Ω at VGS = 10 V and TJ = 25°C. This low resistance ensures minimal voltage drop and power loss during conduction.
Low Gate Charge (Qg): With a typical total gate charge of 28 nC, the device is easy to drive, reducing driving losses and simplifying gate driver design.
Superior Switching Performance: The C7 technology significantly reduces parasitic capacitances (Ciss, Coss, Crss) and features minimal reverse recovery charge (Qrr). This leads to cleaner switching waveforms, reduced electromagnetic interference (EMI), and the ability to operate at higher frequencies.
High Avalanche Ruggedness: The device is designed to withstand unclamped inductive switching (UIS) events, enhancing system robustness and reliability in harsh environments.
Typical Application Circuit: SMPS Example
A primary application for the IPA65R190C7 is in switch-mode power supplies (SMPS), particularly in the power factor correction (PFC) boost stage and LLC resonant converter stages.
The simplified diagram below illustrates its use in a common PFC boost converter:
```
AC Input
|
+---|(BRIDGE RECTIFIER)|---+
| |
| L (Boost Inductor)
| |
| |
Cbulk IPA65R190C7 (Switch)
| |
| |
+---------[Load]-----------+---[GND]
|
[Driver IC]
|
PWM Controller
```
In this circuit:
1. The MOSFET acts as the main switch, controlling the current through the boost inductor.
2. The driver IC, controlled by a PWM signal from a dedicated PFC controller, must source and sink sufficient current to rapidly charge and discharge the low Qg of the MOSFET.
3. The low RDS(on) minimizes conduction losses when the switch is on.
4. The fast switching speed and low Qrr are critical for maintaining high efficiency, especially at transition boundaries (zero-voltage or zero-current switching conditions), and for achieving a high power factor.
Critical Design Considerations
Successfully implementing the IPA65R190C7 requires careful attention to several design aspects:
1. Gate Driving: While the low Qg simplifies driving, a low-inductance, capable gate driver is essential. A gate resistor (typically between 5-22 Ω) is crucial to control the switching speed (dv/dt and di/dt), preventing ringing and overshoot that can lead to EMI and device stress. The driver must be placed as close as possible to the MOSFET gate and source pins.
2. PCB Layout: The high switching speed (dv/dt) makes PCB layout paramount. The goal is to minimize parasitic inductance, especially in the high-current loop (drain-source) and the gate drive loop. Use a tight layout, thick copper pours, and multiple vias. Separate power and signal grounds to avoid noise coupling.
3. Thermal Management: Despite its high efficiency, dissipated power must be managed. The low RthJC (1.0 K/W) allows for efficient heat transfer from the junction to the case. However, a properly sized heatsink with low thermal resistance to ambient is often required to keep the junction temperature (TJ) within safe limits, ensuring long-term reliability.
4. Snubber and Clamping Circuits: For particularly demanding applications with high parasitic inductance, an RC snubber network across the drain and source or an active clamp circuit may be necessary to suppress voltage spikes and protect the MOSFET from overvoltage transients exceeding its 650V rating.
ICGOOODFIND: The Infineon IPA65R190C7 CoolMOS™ C7 represents a significant leap in high-voltage switching technology. Its blend of ultra-low on-resistance, exceptional switching characteristics, and high ruggedness makes it an ideal choice for high-efficiency, high-power-density designs like server and telecom SMPS, solar inverters, and industrial motor drives. By adhering to robust gate driving, layout, and thermal management practices, engineers can fully leverage its performance to create the next generation of power conversion systems.
Keywords:
1. Superjunction MOSFET
2. Switching Losses
3. Gate Driver
4. Thermal Management
5. Power Density
